advanced power p-channel enhancement mode electronics corp. power mosfet lower on-resistance bv dss -30v simple drive requirement r ds(on) 9m fast switching characteristic i d -75a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value unit rthj-c maximum thermal resistance, junction-case 1.4 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data and specifications subject to change without notice parameter total power dissipation operating junction temperature range storage temperature range linear derating factor thermal data continuous drain current, v gs @ 10v -51 pulsed drain current 1 -300 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v 3 AP6679GR rating -30 + 25 -75 0.71 89 2008012303 rohs-compliant product -55 to 150 -55 to 150 1 g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-262 package is widely preferred for commercial-industrial through-hole applications and suited for low voltage applications such as dc/dc converters. g d s to-262(r) free datasheet http:///
ap6679g r electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-30a - - 9 m ? ? , free datasheet http:///
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 ap6679g r 7 9 11 13 15 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -24a t c = 25 : 0 40 80 120 160 200 240 280 0 0.5 1 1.5 2 2.5 3 3.5 4 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -8.0v -6.0v -4.5v v g =-3.0v 0.8 1 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) -v gs(th) (v) 0 15 30 45 60 75 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -30a v g = -10v 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c -10v -8.0v -6.0v -4.5v v g = -3.0v free datasheet http:///
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 AP6679GR 100 1000 10000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss q v g -4.5v q gs q gd q g charge 0 1 2 3 4 5 6 7 0 102030405060 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -16a v ds = -24v 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) 100us 1ms 10ms 100ms 1s dc t c =25 o c single pulse 0 15 30 45 60 75 012345 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds = -5v free datasheet http:///
package outline : to-262 millimeters min nom max a 4.24 4.44 4.64 a1 ----- ----- 2.70 b 0.66 0.76 0.86 b1 1.07 1.27 1.47 b3 0.76 0.86 1.06 c 0.30 0.40 0.50 c1 1.15 1.30 1.45 d 8.30 8.60 8.90 e 9.90 10.20 10.50 e 2.04 2.54 3.04 l 10.50 11.00 11.50 l1 9.50 10.00 10.30 l3 ---- 1.30 ---- l4 10.80 11.30 11.35 e1 e2 e3 d1 1.all dimensions are in millimeters. d2 2.dimension does not include mold protrusions. d3 part marking information & packing : to-262 symbols advanced power electronics corp. 7.0 (ref.) 1.7 (ref.) 7.8 (ref.) 6.6 (ref.) 2.2 (ref.) 7.8 (ref.) package code part number 6679gr logo date code (ywwsss) y last digit of the year ww week sss sequence e b b1 e d l3 l4 l1 b3 a1 a c1 c l ywwsss meet rohs requirement for low voltage mosfet only e1 e2 e3 d1 d2 d3 5 free datasheet http:///
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